Nano-Micro Letters

One-dimensional GaN nanomaterials transformed from one-dimensional Ga2O3 and Ga nanomaterials

X. Y. Han1Y. H. Gao1,2,*, X. H. Zhang1 Abstract
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Nano-Micro Letters, , Volume 1, Issue 1, pp 4-8
Publication Date (Web): October 15, 2009 (Article)
DOI:10.5101/nml.v1i1.p4-8

 

Abstract

 


Figure 1 (a) Morphology of the yellow-colored materials synthesized in a NH3 atmosphere. (b) Morphology of the white-colored materials synthesized in a N2 atmosphere. (c) A GaN nanoribbon transformed from a Ga2O3 ribbon and its [1120] diffraction pattern in (d).

One-dimensional (1D) GaN nanomaterials exhibiting various morphologies and atomic structures were prepared via ammoniation of either Ga2O3 nanoribbons, Ga2O3 nanorods or Ga nanowires filled into carbon nanotubes (CNTs). The 1D GaN nanomaterials transformed from Ga2O3 nanoribbons consisted of numerous GaN nanoplatelets having the close-packed plane, i.e. (0002)2H or (111)3C parallel to the axes of starting nanoribbons. The 1D GaN nanomaterials converted from Ga2O3 nanorods were polycrystalline rods covered with GaN nanoparticles along the axes. The 1D GaN nanomaterials prepared from Ga nanowires filled into CNTs displayed two dominant morphologies: (i) single crystalline GaN nanocolumns coated by CNTs, and (ii) pure single crystalline GaN nanowires. The cross-sectional shape of GaN nanowires were analyzed through the transmission electron microscopy (TEM) images. Formation mechanism of all-mentioned 1D GaN nanomaterials is then thoroughly discussed.


 

Keywords

GaN; One-dimensional; Ga2O3; Nanostructures

 

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