20August2019

Nano-Micro Letters

Multiple stacking of InGaAs/GaAs (731) nanostructures

Y. Z. Xie, V. P. Kunets, Z. M. Wang*, V. Dorogan, Y. I. Mazur,

 J. Wu, G. J. Salamo

Abstract
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Nano-Micro Letters, , Volume 1, Issue 1, pp 1-3

Publication Date (Web): October 15, 2009 (Article)

DOI:10.5101/nml.v1i1.p1-3

 

Abstract

 


Figure 1 5×5 µm AFM images of InGaAs/GaAs(731) multilayer with GaAs spacer of 120 ML, 70 ML, and 50 ML, respectively. The scale bar of 500 nm and the lateral direction of [-113] and [1-32] apply to all three images.

We studied the multilayering effects of InGaAs quantum dots (QDs) on GaAs(731), a surface  lying inside of the stereographic triangle. The surfaces after stacking 16 InGaAs layers were characterized with highly non-uniformity of QD spatial distribution. The bunched step regions driven by strain accumulation are decorated by QDs, therefore GaAs(731) becomes a good candidate substrate for the growth of QD clusters. The unique optical properties of the QD clusters are revealed by photoluminescence measurements. By adjusting the coverage of InGaAs, a bamboo-like nanostructured surface was observed and the quantum dots aligned up in clusters to separate the “bamboo” into sections.


 

Keywords

Quantum dots; MBE; High index surfaces; Nanostructures; Atomic force microscopy

 

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