25September2018

Nano-Micro Letters

A New Method for Fitting Current-Voltage Curves of Planar Heterojunction Perovskite Solar Cells

Peizhe Liao1, Xiaojuan Zhao1, Guolong Li2, Yan Shen1, Mingkui Wang1,*

Abstract
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Nano-Micro Lett. (2018) 10: 5

First Online: 11 September 2017 (Article)

DOI:10.1007/s40820-017-0159-z

*Corresponding author. E-mail: mingkui.wang@mail.hust.edu.cn

 

Abstract

 


Fig. 1 a Single PN junction model for PSCs, and b new double PN junction model improved for planar perovskite solar cells with JL (the light induced current), JD (the dark current or the forward current of PN junction diode under the sunlight), Rs (the series resistance), Rsh (shunt resistance, a fictional parameter to represent the size of leakage current), J (output current of the cell), and V (voltage flowing through the external load). c Planar heterojunction perovskite solar cells with TiO2/CH3NH3PbI3-xClx/Sprio-OMeTAD/Au device architecture

Herein we propose a new equivalent circuit including double heterojunctions in series to simulate the current-voltage characteristic of P-I-N planar structure perovskite solar cells. This new method can theoretically solve the dilemma of the parameter diode ideal factor being larger than 2 from an ideal single heterojunction equivalent circuit, which usually is in the range from 1 to 2. The diode ideal factor reflects PN junction quality, which influences the recombination at electron transport layer/perovskite and perovskite/hole transport layer interface. Based on the double PN junction equivalent circuit, we can also simulate the dark current-voltage curve for analyzing recombination current (Shockley-Read-Hall recombination) and diffusion current (including direct recombination), and thus carrier recombination and transportation characteristics. This new model offers an efficacious and simple method to investigate interfaces condition, film quality of perovskite absorbing layer and performance of transport layer, helping us further improve the device efficiency and analyze the working mechanism.


 

Keywords

Dark current; Device simulation; Junction property; Perovskite; Solar cell

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