Nano-Micro Letters

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

Lixuan Tai1, 3, #, Daming Zhu1, #, *, Xing Liu1, 2, #, Tieying Yang1, Lei Wang1, Rui Wang1, Sheng Jiang1, Zhenhua Chen1, Zhongmin Xu1, Xiaolong Li1,*

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Nano-Micro Lett. (2018) 10: 20

First Online: 06 November 2017 (Article)

DOI:10.1007/s40820-017-0173-1

*Corresponding author. E-mail: zhudaming@sinap.ac.cn ; lixiaolong@sinap.ac.cn

 

Abstract

 


Fig. 1 Designed metal-free CVD synthesis and characterization of the as-grown graphene domains on silicon (100) substrates at 910 °C. a Schematic diagram of the graphene domains grown on the silicon surface. The substrate was placed upside-down in order to capture more methane molecules during growth, which actually occurs on the front face. b Typical AFM height image. c Corresponding AFM height profile along the lines I, II in Fig. 1b. d Corresponding AFM phase image. e Raman spectra of graphene grown on silicon (100) substrates

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.


 

Keywords

Graphene; Silicon; Metal-free CVD; Domain growth

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