Nano-Micro Letters

Highly Enhanced Visible-Light-Driven Photoelectrochemical Performance of ZnO-Modified In2S3 Nanosheet Arrays by Atomic Layer Deposition

Ming Li1,2, Xinglong Tu1,3, Yunhui Wang4, Yanjie Su1,*, Jing Hu1, Baofang Cai1, Jing Lu3,*, Zhi Yang1, Yafei Zhang1,*

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Nano-Micro Lett. (2018) 10: 45

First Online: 23 March 2018 (Article)


*Corresponding author. E-mail: yanjiesu@sjtu.edu.cnjinglu2004@163.com; yfzhang@sjtu.edu.cn





Photoanodes based on In2S3/ZnO heterojunction nanosheet arrays (NSAs) have been fabricated by atomic layer deposition of ZnO over In2S3 NSAs, which were in situ grown on fluorine-doped tin oxide glasses via a facile solvothermal process. The as-prepared photoanodes show dramatically enhanced performance for photoelectrochemical (PEC) water splitting, compared to single semiconductor counterparts. The optical and PEC properties of In2S3/ZnO NSAs were optimized by modulating the thickness of the ZnO overlayer. After pairing with ZnO, NSAs exhibit a broadened absorption range and an increased light absorptance over a wide wavelength region of 250–850 nm. The optimized sample of In2S3/ZnO-50 NSAs show a photocurrent density of 1.642 mA cm-2 (1.5 V vs. RHE) and an incident photon to current efficiency of 27.64% at 380 nm (1.23 V vs. RHE), which are 70 and 116 times higher than those of the pristine In2S3 NSAs, respectively. A detailed energy band edge analysis reveals the type-II band alignment of the In2S3/ZnO heterojunction, which enables efficient separation and collection of photogenerated carriers, especially with the assistance of positive bias potential, and then results in the significantly increased PEC activity.



In2S3/ZnO; Heterojunction; Nanosheet arrays; Atomic layer deposition; Photoelectrochemical; Water splitting; Energy band

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