20November2018

Nano-Micro Letters

Controllable Vapor Growth of Large-Area Aligned CdSxSe1-x Nanowires for Visible Range Integratable Photodetectors

Muhammad Shoaib1, Xiaoxia Wang1, Xuehong Zhang1, Qinglin Zhang1, Anlian Pan1,*

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Nano-Micro Lett. (2018) 10: 58

First Online: 03 June 2018 (Article)

DOI:10.1007/s40820-018-0211-7

*Corresponding author. E-mail: anlian.pan@hnu.edu.cn

 

Abstract

 


Toc

The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane aligned CdSxSe1-x nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdSxSe1-x NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdSxSe1-x NWs possess smooth surface and uniform diameter. The aligned CdSxSe1-x NWs have strong photoluminescence and high quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdSxSe1-x NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~670 A W-1 and photoresponse time ~76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays, which exhibit promising applications in future optoelectronic integrated circuits. 


 

Keywords

Graphoepitaxial effect; Bandgap engineering; CdSxSe1-x nanowires; Optical waveguide; Photodetectors

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