20August2019

Nano-Micro Letters

Low-programmable-voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

Ngoc Huynh Van1, Jae-Hyun Lee2, Dongmok Whang2, Dae Joon Kang1,*

Abstract
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Nano-Micro Letters, , Volume 7, Issue 1, pp 35-41

First Online: October 23, 2014 (Article)

DOI:10.1007/s40820-014-0016-2

 

Abstract

 


a Optical and b FE-SEM images of p-type Si NW FET devices; c four probe measurements and d hysteresis behaviors for a back-gate Si NW FET during the gate voltage scan from +5 to -5 V, +10 to -10 V, and back.

A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame the interfacial layer problem by incorporating P(VDF-TrFE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3×104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFF ratio higher than 102.

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