Nano-Micro Letters

Advances in MoS2-based Field Effect Transistors (FETs)

Xin Tong1, Eric Ashalley1, Feng Lin1, Handong Li2, Zhiming M. Wang1,2,*

Abstract
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Nano-Micro Letters, , Volume 7, Issue 3, pp 203-218

First online: 13 Feb 2015 (Review)

DOI: 10.1007/s40820-015-0034-8

 

 


a Ids (drain-source current) vs Vbg (back-gate voltage) curves for 1-layer and 4-layers MoS2 FETs(Vds = 0.1 V). b Different Vbg and corresponding contact resistance (Rcontact), channel resistance (Rchannel) and total resistance (Rtotal) of 4-layers MoS2 FET under the condition of Ids = 0.1 µA. c and d illustrated the output characteristics(Ids vs Vds) of 1-layer and 4-layers MoS2 FET, respectively.

This paper reviews the original achievements and advances regarding the field effect transistor (FET) fabricated from one of the most studied transition metal dichalcogenides (TMDCs): two-dimensional (2D) MoS2. Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer MoS2 is featured with a 1.9 eV gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed, many MoS2 devices based on FET architecture such as phototransistors, memory devices and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the MoS2-based FETs are presented. Engineering of MoS2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric and doping strategies. Also reported are demonstrations of device behaviors such as low frequency noise (LFN) and photoresponse in MoS2-based FETs, which is crucial for developing electronic and optoelectronic devices.


 

Keywords

MoS2 FETs engineering; Low-Frequency noise; Optical properties; MoS2 sensors; MoS2 memory devices

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